The FQP30N06L is an N-channel enhancement mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that operates at a voltage of 60V and a current of 32A. It is produced using Fairchild’s proprietary planar stripe and DMOS (Double-Diffused MOS) technology. This advanced MOSFET technology is specifically designed to reduce on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.

Some key features and specifications of the FQP30N06L MOSFET include:

  • Low on-state resistance (RDS(on)): The FQP30N06L has a low on-state resistance, which helps minimize power losses and improve efficiency in applications.
  • Logic-level gate drive: The MOSFET is designed to be compatible with logic-level signals (3.3V or 5V), allowing it to be easily controlled by microcontrollers or other digital circuits.
  • Fast switching speed: The FQP30N06L offers fast switching characteristics, enabling efficient operation in applications that require rapid switching.
  • High avalanche energy strength: The MOSFET is capable of withstanding high energy pulses in avalanche and commutation modes, ensuring reliable performance in demanding conditions.
  • TO-220AB package: The FQP30N06L is typically available in a TO-220AB package, which provides convenient mounting and thermal dissipation capabilities.


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